منابع مشابه
Magnetic and Optical Properties of Mn-doped Gan Thin Films and P-i-n Devices
In this paper, we report on the growth and characterization of single crystal GaMnN thin films and p-i-n junction devices grown by metal-organic chemical vapor deposition (MOCVD). Single crystal GaMnN films were achieved by optimizing the growth temperature, growth rate and the Mn:Ga gas phase ratio. A growth window for obtaining single crystal Ga1-xMnxN with 0.006≤x≤0.023 was found within a te...
متن کاملOptical, Photoluminescence and Thermoluminescence Properties Investigation of ZnO and Mn Doped ZnO Nanocrystals
ZnO and ZnO: Mn nanocrystals synthesized via reverse micelle method. The structural properties nanocrystals were investigated by XRD and Transmission electron microscopy (TEM). The XRD results indicate that the synthesized nanocrystals had a pure wurtzite (hexagonal phase) structure. The various optical properties of these nanocrystals such as optical band gap energy, refractive index, dielectr...
متن کاملOptical, Photoluminescence and Thermoluminescence Properties Investigation of ZnO and Mn Doped ZnO Nanocrystals
ZnO and ZnO: Mn nanocrystals synthesized via reverse micelle method. The structural properties nanocrystals were investigated by XRD and Transmission electron microscopy (TEM). The XRD results indicate that the synthesized nanocrystals had a pure wurtzite (hexagonal phase) structure. The various optical properties of these nanocrystals such as optical band gap energy, refractive index, dielectr...
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15 صفحه اولSPIN-DEPENDENT TRANSPORT IN Mn DOPED GaAs AND GaN DIODES
OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNLOGY P.O. BOX 1000, FI-02015 TKK http://www.tkk.fi Author Heikki Holmberg Name of the dissertation Spin-dependent transport in Mn Doped GaAs and GaN diodes Manuscript submitted 16.11.2007 Manuscript revised 4.2.2008 Date of the defence 14.3.2008 Monograph Article dissertation (summary + original articles) Faculty Faculty of Electronics, Commu...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 2003
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-798-y8.5